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IPW60R037CSFD

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RF Front End [27]
Industrial Temperature Sensors [2]
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Compass, Magnetic Field (Modules) [5]
Photo Detectors - Logic Output [1]
Photoelectric, Industrial [1]
NTC Thermistors [40]

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IPW60R037CSFD

Transistor Polarity : N-Channel

Product Category : MOSFET

Typical Turn-On Delay Time : 53 ns

Subcategory : MOSFETs

Pd-power dissipation : 245 W

Vgs-gate-source voltage : -20 V, + 20 V

Minimum working temperature : -55 C

Package : Tube

Fall Time : 6 ns

Manufacturer : Infineon Technologies

Factory packing quantity : 240

Typical Turn-Off Delay Time : 196 ns

Configuration : Single

Product Type : MOSFET

Maximum working temperature : + 150 C

Rise Time : 30 ns

Number of Channels : 1 Channel

trademark : Infineon Technologies

Qg-gate charge : 136 nC

Id-continuous drain current : 54 A

Transistor Type : 1 N-Channel

Installation style : Through Hole

Package / Box : TO-247-3

Channel Mode : Enhancement

Technology : Si

Vds-Drain-source breakdown voltage : 650 V

Rds On-Drain-source on resistance : 37 mOhms

Vgs th- gate-source threshold voltage : 3.5 V

Description : HIGH POWER_NEW

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The IPW60R037CSFD,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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