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BSS123WQ-7-F

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Translation - Voltage Levels [57]
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Encoders, Decoders, Multiplexers & Demultiplexers [83]
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PCI Express / PCI Connectors [14]
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Power Switch ICs - POE / LAN [11]
D-Sub Backshells [1]
USB Switch ICs [4]
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Memory Card Connectors [43]
Power Switch ICs - Power Distribution [349]
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FFC & FPC Connectors [131]
Multiplexer Switch ICs [101]
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RF Front End [27]
Industrial Temperature Sensors [2]
RF Transceiver [7]
RF Mixer [9]
RF Receiver [49]
RFID Transponders [1]
Surface Mount Fuses [155]
RF Amplifier [190]
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Position, Proximity, Speed (Modules) - Industrial [4]
Inclinometers [4]
Compass, Magnetic Field (Modules) [5]
Photo Detectors - Logic Output [1]
Photoelectric, Industrial [1]
NTC Thermistors [40]

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BSS123WQ-7-F

Transistor Polarity : N-Channel

Technology : Si

Id - Continuous Drain Current : 170 mA

Mounting Style : SMD/SMT

Minimum Operating Temperature : - 55 C

Package / Case : SOT-323-3

Maximum Operating Temperature : + 150 C

Channel Mode : Enhancement

Vds - Drain-Source Breakdown Voltage : 100 V

Packaging : Reel

Vgs th - Gate-Source Threshold Voltage : 800 mV

Product Category : MOSFET

Number of Channels : 1 Channel

Vgs - Gate-Source Voltage : 20 V

Rds On - Drain-Source Resistance : 10 Ohms

Manufacturer : Diodes Incorporated

Description : MOSFET 100V N-Ch Enh FET 100Vdgr 20Vgss 200mA

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The BSS123WQ-7-F,from Diodes Incorporated,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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