Sign In | Join Free | My xxjcy.com |
|
Gate-Emitter Leakage Current : 400 nA
Product Category : IGBT Modules
Continuous Collector Current at 25 C : 150 A
Pd - Power Dissipation : 335 W
Collector- Emitter Voltage VCEO Max : 650 V
Package / Case : Module
Maximum Operating Temperature : + 150 C
Configuration : IGBT-Inverter
Collector-Emitter Saturation Voltage : 1.45 V
Product : IGBT Silicon Modules
Manufacturer : Infineon Technologies
Description : IGBT Modules IGBT MODULES 650V 150A
![]() |
F3L150R07W2E3_B11 Images |
Friendly Links: www.everychina.com
Home| Products| Suppliers| Site Map |About Us |Contact Us |Help |关于我们 |联系我们
Thank you! Your message has been sent to the following suppliers.