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SI2333DDS-T1-GE3

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SI2333DDS-T1-GE3

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 1V @ 250µA

Operating Temperature : -55°C ~ 150°C (TJ)

Package / Case : TO-236-3, SC-59, SOT-23-3

Gate Charge (Qg) (Max) @ Vgs : 35 nC @ 8 V

Rds On (Max) @ Id, Vgs : 28mOhm @ 5A, 4.5V

FET Type : P-Channel

Drive Voltage (Max Rds On, Min Rds On) : 1.5V, 4.5V

Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®

Drain to Source Voltage (Vdss) : 12 V

Vgs (Max) : ±8V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 1275 pF @ 6 V

Mounting Type : Surface Mount

Series : TrenchFET®

Supplier Device Package : SOT-23-3 (TO-236)

Mfr : Vishay Siliconix

Current - Continuous Drain (Id) @ 25°C : 6A (Tc)

Power Dissipation (Max) : 1.2W (Ta), 1.7W (Tc)

Technology : MOSFET (Metal Oxide)

Base Product Number : SI2333

Description : MOSFET P-CH 12V 6A SOT23-3

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P-Channel 12 V 6A (Tc) 1.2W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
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