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SQJ488EP-T2_BE3

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SQJ488EP-T2_BE3

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 2.5V @ 250µA

Operating Temperature : -55°C ~ 175°C (TJ)

Package / Case : PowerPAK® SO-8

Gate Charge (Qg) (Max) @ Vgs : 27 nC @ 10 V

Rds On (Max) @ Id, Vgs : 21mOhm @ 7.1A, 10V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®

Drain to Source Voltage (Vdss) : 100 V

Vgs (Max) : ±20V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 978 pF @ 50 V

Mounting Type : Surface Mount

Series : Automotive, AEC-Q101, TrenchFET®

Supplier Device Package : PowerPAK® SO-8

Mfr : Vishay Siliconix

Current - Continuous Drain (Id) @ 25°C : 42A (Tc)

Power Dissipation (Max) : 83W (Tc)

Technology : MOSFET (Metal Oxide)

Base Product Number : SQJ488

Description : MOSFET N-CH 100V 42A PPAK SO-8

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N-Channel 100 V 42A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8

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