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IXTK110N20L2

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Photoelectric, Industrial [1]
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IXTK110N20L2

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 4.5V @ 3mA

Operating Temperature : -55°C ~ 150°C (TJ)

Package / Case : TO-264-3, TO-264AA

Gate Charge (Qg) (Max) @ Vgs : 500 nC @ 10 V

Rds On (Max) @ Id, Vgs : 24mOhm @ 55A, 10V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 10V

Package : Tube

Drain to Source Voltage (Vdss) : 200 V

Vgs (Max) : ±20V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 23000 pF @ 25 V

Mounting Type : Through Hole

Series : Linear L2™

Supplier Device Package : TO-264 (IXTK)

Mfr : IXYS

Current - Continuous Drain (Id) @ 25°C : 110A (Tc)

Power Dissipation (Max) : 960W (Tc)

Technology : MOSFET (Metal Oxide)

Base Product Number : IXTK110

Description : MOSFET N-CH 200V 110A TO264

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N-Channel 200 V 110A (Tc) 960W (Tc) Through Hole TO-264 (IXTK)

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