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IPP60R380E6

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IPP60R380E6

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

Gate Charge (Qg) (Max) @ Vgs : 32 nC @ 10 V

Product Status : Active

Mounting Type : Through Hole

Package : Bulk

Input Capacitance (Ciss) (Max) @ Vds : 700 pF @ 100 V

Series : CoolMOS E6™

Vgs (Max) : ±20V

Vgs(th) (Max) @ Id : 3.5V @ 300µA

Supplier Device Package : PG-TO220-3-1

Rds On (Max) @ Id, Vgs : 380mOhm @ 3.8A, 10V

Mfr : Infineon Technologies

Operating Temperature : -55°C ~ 150°C (TJ)

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 10V

Power Dissipation (Max) : 83W (Tc)

Package / Case : TO-220-3

Drain to Source Voltage (Vdss) : 600 V

Current - Continuous Drain (Id) @ 25°C : 10.6A (Tc)

Technology : MOSFET (Metal Oxide)

FET Feature : -

Description : COOLMOS N-CHANNEL POWER MOSFET

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N-Channel 600 V 10.6A (Tc) 83W (Tc) Through Hole PG-TO220-3-1
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