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Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs : 112 nC @ 10 V
Product Status : Active
Mounting Type : Through Hole
Package : Bulk
Input Capacitance (Ciss) (Max) @ Vds : 4785 pF @ 100 V
Series : SupreMOS™
Vgs (Max) : ±30V
Vgs(th) (Max) @ Id : 4V @ 250µA
Supplier Device Package : TO-220-3
Rds On (Max) @ Id, Vgs : 90mOhm @ 18A, 10V
Mfr : onsemi
Operating Temperature : -55°C ~ 150°C (TJ)
FET Type : N-Channel
Drive Voltage (Max Rds On, Min Rds On) : 10V
Power Dissipation (Max) : 312W (Tc)
Package / Case : TO-220-3
Drain to Source Voltage (Vdss) : 600 V
Current - Continuous Drain (Id) @ 25°C : 36A (Tc)
Technology : MOSFET (Metal Oxide)
FET Feature : -
Description : POWER MOSFET, N-CHANNEL, SUPREMO
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