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FDS86267P

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FFC & FPC Connectors [131]
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RF Front End [27]
Industrial Temperature Sensors [2]
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RF Mixer [9]
RF Receiver [49]
RFID Transponders [1]
Surface Mount Fuses [155]
RF Amplifier [190]
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Position, Proximity, Speed (Modules) - Industrial [4]
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Compass, Magnetic Field (Modules) [5]
Photo Detectors - Logic Output [1]
Photoelectric, Industrial [1]
NTC Thermistors [40]

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FDS86267P

Product Category : MOSFET

Vgs (Max) : ±25V

Current - Continuous Drain (Id) @ 25°C : 2.2A (Ta)

FET Type : P-Channel

Mounting Type : Surface Mount

Gate Charge (Qg) (Max) @ Vgs : 16nC @ 10V

Manufacturer : onsemi

Minimum Quantity : 2500

Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V

Operating Temperature : -55°C ~ 150°C (TJ)

FET Feature : -

Series : PowerTrench®

Input Capacitance (Ciss) (Max) @ Vds : 1130pF @ 75V

Supplier Device Package : 8-SOIC

Part Status : Active

Packaging : Tape & Reel (TR)

Rds On (Max) @ Id, Vgs : 255 mOhm @ 2.2A, 10V

Power Dissipation (Max) : 1W (Ta)

Package / Case : 8-SOIC (0.154", 3.90mm Width)

Technology : MOSFET (Metal Oxide)

Vgs(th) (Max) @ Id : 4V @ 250µA

Drain to Source Voltage (Vdss) : 150V

Description : MOSFET P-CH 150V

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