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IRFR4510TRPBF

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RF Front End [27]
Industrial Temperature Sensors [2]
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RF Receiver [49]
RFID Transponders [1]
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Compass, Magnetic Field (Modules) [5]
Photo Detectors - Logic Output [1]
Photoelectric, Industrial [1]
NTC Thermistors [40]

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IRFR4510TRPBF

Product Category : MOSFET

Vgs (Max) : ±20V

Current - Continuous Drain (Id) @ 25°C : 56A (Tc)

FET Type : N-Channel

Mounting Type : Surface Mount

Gate Charge (Qg) (Max) @ Vgs : 81nC @ 10V

Manufacturer : Infineon Technologies

Minimum Quantity : 2000

Drive Voltage (Max Rds On, Min Rds On) : 10V

Operating Temperature : -55°C ~ 175°C (TJ)

FET Feature : -

Series : HEXFET®

Input Capacitance (Ciss) (Max) @ Vds : 3031pF @ 50V

Supplier Device Package : D-PAK

Part Status : Active

Packaging : Tape & Reel (TR)

Rds On (Max) @ Id, Vgs : 13.9 mOhm @ 38A, 10V

Power Dissipation (Max) : 143W (Tc)

Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63

Technology : MOSFET (Metal Oxide)

Vgs(th) (Max) @ Id : 4V @ 100µA

Drain to Source Voltage (Vdss) : 100V

Description : MOSFET N CH 100V 56A DPAK

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