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Product Category : MOSFET
Vgs (Max) : ±20V
Current - Continuous Drain (Id) @ 25°C : 120A (Tc)
FET Type : N-Channel
Mounting Type : Through Hole
Gate Charge (Qg) (Max) @ Vgs : 120nC @ 10V
Manufacturer : Infineon Technologies
Minimum Quantity : 1
Drive Voltage (Max Rds On, Min Rds On) : 10V
Operating Temperature : -55°C ~ 175°C (TJ)
FET Feature : -
Series : HEXFET®
Input Capacitance (Ciss) (Max) @ Vds : 4520pF @ 50V
Supplier Device Package : TO-262
Part Status : Active
Packaging : Tube
Rds On (Max) @ Id, Vgs : 4.2 mOhm @ 75A, 10V
Power Dissipation (Max) : 230W (Tc)
Package / Case : TO-262-3 Long Leads, I²Pak, TO-262AA
Technology : MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id : 4V @ 150µA
Drain to Source Voltage (Vdss) : 60V
Description : MOSFET N-CH 60V 120A TO-262
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