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Product Category : MOSFET
Vgs (Max) : ±20V
Current - Continuous Drain (Id) @ 25°C : 195A (Tc)
FET Type : N-Channel
Mounting Type : Through Hole
Gate Charge (Qg) (Max) @ Vgs : 300nC @ 10V
Manufacturer : Infineon Technologies
Minimum Quantity : 1000
Drive Voltage (Max Rds On, Min Rds On) : 10V
Operating Temperature : -55°C ~ 175°C (TJ)
FET Feature : -
Series : HEXFET®
Input Capacitance (Ciss) (Max) @ Vds : 8970pF @ 50V
Supplier Device Package : TO-220AB
Part Status : Not For New Designs
Packaging : Tube
Rds On (Max) @ Id, Vgs : 2.5 mOhm @ 170A, 10V
Power Dissipation (Max) : 375W (Tc)
Package / Case : TO-220-3
Technology : MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id : 4V @ 250µA
Drain to Source Voltage (Vdss) : 60V
Description : MOSFET N-CH 60V 195A TO220AB
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