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STH315N10F7-2

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STH315N10F7-2

Product Category : MOSFET

Vgs (Max) : ±20V

Current - Continuous Drain (Id) @ 25°C : 180A (Tc)

FET Type : N-Channel

Mounting Type : Surface Mount

Gate Charge (Qg) (Max) @ Vgs : 180nC @ 10V

Manufacturer : STMicroelectronics

Minimum Quantity : 1000

Drive Voltage (Max Rds On, Min Rds On) : 10V

Operating Temperature : -55°C ~ 175°C (TJ)

FET Feature : -

Series : Automotive, AEC-Q101, DeepGATE™, STripFET™ VII

Input Capacitance (Ciss) (Max) @ Vds : 12800pF @ 25V

Supplier Device Package : H2PAK-2

Part Status : Active

Packaging : Tape & Reel (TR)

Rds On (Max) @ Id, Vgs : 2.3 mOhm @ 60A, 10V

Power Dissipation (Max) : 315W (Tc)

Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Technology : MOSFET (Metal Oxide)

Vgs(th) (Max) @ Id : 4.5V @ 250µA

Drain to Source Voltage (Vdss) : 100V

Description : MOSFET N-CH 100V 180A H2PAK-2

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The STH315N10F7-2,from STMicroelectronics,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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