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Transistor Polarity : N-Channel, P-Channel
Technology : Si
Id - Continuous Drain Current : 6 A, - 4.2 A
Mounting Style : SMD/SMT
Minimum Operating Temperature : - 55 C
Package / Case : SO-8
Maximum Operating Temperature : + 150 C
Channel Mode : Enhancement
Vds - Drain-Source Breakdown Voltage : 30 V, - 30 V
Packaging : Reel
Vgs th - Gate-Source Threshold Voltage : 1 V, - 2 V
Product Category : MOSFET
Rds On - Drain-Source Resistance : 40 mOhms, 80 mOhms
Number of Channels : 4 Channel
Vgs - Gate-Source Voltage : +/- 20 V, +/- 20 V
Qg - Gate Charge : 11.7 nC, 11.4 nC
Manufacturer : Diodes Incorporated
Description : MOSFET 30V Comp ENH Mode H-Bridge 20V VGSS
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