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Transistor Polarity : N-Channel
Technology : Si
Id - Continuous Drain Current : 1.2 A
Mounting Style : SMD/SMT
Minimum Operating Temperature : - 55 C
Package / Case : DFN1006B-3
Maximum Operating Temperature : + 150 C
Channel Mode : Enhancement
Vds - Drain-Source Breakdown Voltage : 20 V
Packaging : Reel
Vgs th - Gate-Source Threshold Voltage : 450 mV
Product Category : MOSFET
Rds On - Drain-Source Resistance : 270 mOhms
Number of Channels : 1 Channel
Vgs - Gate-Source Voltage : 8 V
Qg - Gate Charge : 1.4 nC
Manufacturer : Nexperia
Description : MOSFET 20V N-Channel Trench MOSFET
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