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SQ3427AEEV-T1_GE3

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USB Switch ICs [4]
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Power Switch ICs - Power Distribution [349]
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FFC & FPC Connectors [131]
Multiplexer Switch ICs [101]
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RF Front End [27]
Industrial Temperature Sensors [2]
RF Transceiver [7]
RF Mixer [9]
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RFID Transponders [1]
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Position, Proximity, Speed (Modules) - Industrial [4]
Inclinometers [4]
Compass, Magnetic Field (Modules) [5]
Photo Detectors - Logic Output [1]
Photoelectric, Industrial [1]
NTC Thermistors [40]

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SQ3427AEEV-T1_GE3

Transistor Polarity : P-Channel

Technology : Si

Id - Continuous Drain Current : - 5.3 A

Mounting Style : SMD/SMT

Tradename : TrenchFET

Minimum Operating Temperature : - 55 C

Package / Case : TSOP-6

Maximum Operating Temperature : + 175 C

Channel Mode : Enhancement

Vds - Drain-Source Breakdown Voltage : - 60 V

Packaging : Reel

Vgs th - Gate-Source Threshold Voltage : - 2.5 V

Product Category : MOSFET

Rds On - Drain-Source Resistance : 0.079 Ohms

Number of Channels : 1 Channel

Vgs - Gate-Source Voltage : +/- 20 V

Qg - Gate Charge : 22 nC

Manufacturer : Vishay Semiconductors

Description : MOSFET -60V Vds +/-20V Vgs AEC-Q101 Qualified

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The SQ3427AEEV-T1_GE3,from Vishay Semiconductors,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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