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TK12A60D

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TK12A60D

Product Category : MOSFET

Vgs (Max) : ±30V

Current - Continuous Drain (Id) @ 25°C : 12A (Ta)

FET Type : N-Channel

Mounting Type : Through Hole

Gate Charge (Qg) (Max) @ Vgs : 38nC @ 10V

Manufacturer : Toshiba

Minimum Quantity : 2500

Drive Voltage (Max Rds On, Min Rds On) : 10V

Operating Temperature : 150°C (TJ)

FET Feature : -

Series : π-MOSVII

Input Capacitance (Ciss) (Max) @ Vds : 1800pF @ 25V

Supplier Device Package : TO-220SIS

Part Status : Active

Packaging : Tube

Rds On (Max) @ Id, Vgs : 550 mOhm @ 6A, 10V

Power Dissipation (Max) : 45W (Tc)

Package / Case : TO-220-3 Full Pack

Technology : MOSFET (Metal Oxide)

Vgs(th) (Max) @ Id : 4V @ 1mA

Drain to Source Voltage (Vdss) : 600V

Description : MOSFET N-CH 600V 12A TO-220SIS

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The TK12A60D,from Toshiba,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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