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Product Category : MOSFET
Vgs (Max) : ±30V
Current - Continuous Drain (Id) @ 25°C : 12A (Ta)
FET Type : N-Channel
Mounting Type : Through Hole
Gate Charge (Qg) (Max) @ Vgs : 38nC @ 10V
Manufacturer : Toshiba
Minimum Quantity : 2500
Drive Voltage (Max Rds On, Min Rds On) : 10V
Operating Temperature : 150°C (TJ)
FET Feature : -
Series : π-MOSVII
Input Capacitance (Ciss) (Max) @ Vds : 1800pF @ 25V
Supplier Device Package : TO-220SIS
Part Status : Active
Packaging : Tube
Rds On (Max) @ Id, Vgs : 550 mOhm @ 6A, 10V
Power Dissipation (Max) : 45W (Tc)
Package / Case : TO-220-3 Full Pack
Technology : MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id : 4V @ 1mA
Drain to Source Voltage (Vdss) : 600V
Description : MOSFET N-CH 600V 12A TO-220SIS
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