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BSG0811ND

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Photo Detectors - Logic Output [1]
Photoelectric, Industrial [1]
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BSG0811ND

Transistor Polarity : N-Channel

Technology : Si

Id - Continuous Drain Current : 50 A, 50 A

Mounting Style : SMD/SMT

Minimum Operating Temperature : - 55 C

Package / Case : TISON-8

Maximum Operating Temperature : + 150 C

Channel Mode : Enhancement

Vds - Drain-Source Breakdown Voltage : 25 V, 25 V

Packaging : Reel

Vgs th - Gate-Source Threshold Voltage : 1.2 V, 1.2 V

Product Category : MOSFET

Rds On - Drain-Source Resistance : 2.4 mOhms, 700 uOhms

Number of Channels : 2 Channel

Vgs - Gate-Source Voltage : 16 V, 16 V

Qg - Gate Charge : 8.4 nC, 29 nC

Manufacturer : Infineon Technologies

Description : MOSFET DIFFERENTIATED MOSFETS

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