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Transistor Polarity : N-Channel
Technology : Si
Product Category : MOSFET
Mounting Style : SMD/SMT
Package / Case : TO-263-3
Maximum Operating Temperature : + 150 C
Vds - Drain-Source Breakdown Voltage : 650 V
Packaging : Reel
Vgs th - Gate-Source Threshold Voltage : 4 V
Id - Continuous Drain Current : 27 A
Rds On - Drain-Source Resistance : 85 mOhms
Number of Channels : 1 Channel
Vgs - Gate-Source Voltage : 25 V
Qg - Gate Charge : 83 nC
Manufacturer : STMicroelectronics
Description : MOSFET POWER MOSFET N-CH 650V
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