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SI1012CR-T1-GE3

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SI1012CR-T1-GE3

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 1V @ 250µA

Operating Temperature : -55°C ~ 150°C (TJ)

Package / Case : SC-75, SOT-416

Gate Charge (Qg) (Max) @ Vgs : 2 nC @ 8 V

Rds On (Max) @ Id, Vgs : 396mOhm @ 600mA, 4.5V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 1.5V, 4.5V

Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®

Drain to Source Voltage (Vdss) : 20 V

Vgs (Max) : ±8V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 43 pF @ 10 V

Mounting Type : Surface Mount

Series : TrenchFET®

Supplier Device Package : SC-75A

Mfr : Vishay Siliconix

Current - Continuous Drain (Id) @ 25°C : 630mA (Ta)

Power Dissipation (Max) : 240mW (Ta)

Technology : MOSFET (Metal Oxide)

Base Product Number : SI1012

Description : MOSFET N-CH 20V SC75A

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N-Channel 20 V 630mA (Ta) 240mW (Ta) Surface Mount SC-75A
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