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Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature : -
Vgs(th) (Max) @ Id : 1.2V @ 1mA
Operating Temperature : 150°C (TJ)
Package / Case : SOT-23-3 Flat Leads
Gate Charge (Qg) (Max) @ Vgs : 8.2 nC @ 4.5 V
Rds On (Max) @ Id, Vgs : 42mOhm @ 5A, 10V
FET Type : P-Channel
Drive Voltage (Max Rds On, Min Rds On) : 1.8V, 10V
Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss) : 30 V
Vgs (Max) : ±12V
Product Status : Active
Input Capacitance (Ciss) (Max) @ Vds : 560 pF @ 15 V
Mounting Type : Surface Mount
Series : U-MOSVI
Supplier Device Package : SOT-23F
Mfr : Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C : 6A (Ta)
Power Dissipation (Max) : 1W (Ta)
Technology : MOSFET (Metal Oxide)
Base Product Number : SSM3J332
Description : MOSFET P-CH 30V 6A SOT23F
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SSM3J332R,LF Images |
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