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Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature : -
Vgs(th) (Max) @ Id : 4V @ 1mA
Operating Temperature : 150°C (TJ)
Package / Case : TO-247-3
Gate Charge (Qg) (Max) @ Vgs : 260 nC @ 10 V
Rds On (Max) @ Id, Vgs : 42mOhm @ 44.4A, 10V
FET Type : N-Channel
Drive Voltage (Max Rds On, Min Rds On) : 10V
Package : Tube
Drain to Source Voltage (Vdss) : 600 V
Vgs (Max) : ±20V
Product Status : Active
Input Capacitance (Ciss) (Max) @ Vds : 6500 pF @ 25 V
Mounting Type : Through Hole
Series : -
Supplier Device Package : TO-247
Mfr : Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C : 76A (Tc)
Power Dissipation (Max) : 735W (Tc)
Technology : MOSFET (Metal Oxide)
Base Product Number : R6076
Description : MOSFET N-CH 600V 76A TO247
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R6076ENZ4C13 Images |
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