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Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature : -
Vgs(th) (Max) @ Id : 4.5V @ 50µA
Operating Temperature : -55°C ~ 150°C (TJ)
Package / Case : TO-220-3
Gate Charge (Qg) (Max) @ Vgs : 15.5 nC @ 10 V
Rds On (Max) @ Id, Vgs : 15Ohm @ 500mA, 10V
FET Type : N-Channel
Drive Voltage (Max Rds On, Min Rds On) : 10V
Package : Tube
Drain to Source Voltage (Vdss) : 1000 V
Vgs (Max) : ±20V
Product Status : Active
Input Capacitance (Ciss) (Max) @ Vds : 331 pF @ 25 V
Mounting Type : Through Hole
Series : Polar
Supplier Device Package : TO-220-3
Mfr : IXYS
Current - Continuous Drain (Id) @ 25°C : 1A (Tc)
Power Dissipation (Max) : 50W (Tc)
Technology : MOSFET (Metal Oxide)
Base Product Number : IXTP1
Description : MOSFET N-CH 1000V 1A TO220AB
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